| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 60V |
| Continuous Collector Current | 30A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
Design various electronic circuits with this versatile PNP JANTX2N4399 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
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