| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-39 |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
This PNP JANS2N3637 general purpose bipolar junction transistor from Microsemi is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V.
Microsemi
7 Pages / 0.41 MByte
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