| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IXXH30N60B3D1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 600 V. This device utilizes xpt technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
IXYS Semiconductor
7 Pages / 0.23 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 270000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 270000mW Automotive 3Pin(3+Tab) TO-247AD
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