| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-268 |
| Polarity | N-Channel |
| Power Dissipation | 540 W |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 40A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This IXTT40N50L2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 540000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes linear l2 technology.
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 40A 3Pin(2+Tab) TO-268
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