| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This IXGT6N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.16 MByte
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(2+Tab) TO-268
IXYS Semiconductor
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IXYS Semiconductor
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IXYS Semiconductor
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