| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
Don"t be afraid to step up the amps in your device when using this IXGT32N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
5 Pages / 0.56 MByte
IXYS Semiconductor
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