| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.70 kV |
| Current Rating | 75.0 A |
| Case/Package | TO-247-3 |
| Rise Time | 57.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
This IXGH32N170A IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
5 Pages / 0.55 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 75A 350000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 32A 350000mW 3Pin(3+Tab) TO-247AD
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