| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Minimize the current at your gate with the IXGH16N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 190000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 32A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247
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