| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | i4-Pac?-5 (3 leads) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This IXGF25N250 IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 114000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
IXYS Semiconductor
5 Pages / 0.21 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 3000V 27A 114000mW 3Pin ISOPLUS I4-PAC
IXYS Semiconductor
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