| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 16.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Input Capacitance | 2.25 nF |
| Gate Charge | 43.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 16.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFP16N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
4 Pages / 0.24 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 16A 3Pin(3+Tab) TO-220
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