| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 73.0 A |
| Case/Package | ISOTOP |
| Drain to Source Resistance (on) (Rds) | 45.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 520 W |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 73.0 A |
| Rise Time | 80.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
● miniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
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