| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 64.0 A |
| Case/Package | SOT-227 |
| Drain to Source Resistance (on) (Rds) | 96.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Input Capacitance | 1.15 nF |
| Gate Charge | 200 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 50.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IXFN64N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Unclamped inductive switching (UIS) rated
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
● Low RDS (ON) HDMOS™ process
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN64N60P Power MOSFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
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