TYPE | DESCRIPTION |
---|
Mounting Style | Chassis |
Number of Pins | 3 Pin |
Case/Package | ISOTOP |
Polarity | N-Channel |
Power Dissipation | 600 W |
Continuous Drain Current (Ids) | 55.0 A |
Isolation Voltage | 2.50 kV |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Weight | 46.0 g |
The IXFN55N50 is a single N-channel Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 55A 4Pin SOT-227B
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