| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 3 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 780 W |
| Continuous Drain Current (Ids) | 32.0 A |
| TYPE | DESCRIPTION |
|---|
| Weight | 36.0 mg |
The IXFN32N120 is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● miniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
0.55 MByte
IXYS Semiconductor
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IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN32N120 Power MOSFET, N Channel, 32A, 1.2kV, 350mohm, 10V, 5V
IXYS Semiconductor
Trans MOSFET N-CH 1kV 27A 4Pin SOT-227B
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