| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 24.0 A |
| Case/Package | ISOTOP |
| Drain to Source Resistance (on) (Rds) | 390 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 35.0 ns |
| Isolation Voltage | 2.50 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Weight | 40.0 g |
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Low RDS (ON) HDMOS™ process
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
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