| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 680 W |
| Continuous Drain Current (Ids) | 200 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
● Fast intrinsic rectifier
● Rugged polysilicon gate cell structure
● Encapsulating epoxy meets UL94V-0, flammability classification
● Rugged polysilicon gate cell structure
● Easy to mount
● High power density
● Space savings
IXYS Semiconductor
5 Pages / 0.08 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 200A 4Pin SOT-227B
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