| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 680 W |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 180 A |
The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Encapsulating epoxy meets UL94V-0 flammability
● miniBLOC with aluminium nitride isolation
● Fast recovery diode
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
