| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 180 A |
| Isolation Voltage | 2.50 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Weight | 42.0 g |
The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● miniBLOC with aluminium nitride isolation
● Low drain-to-tab capacitance
● Low inductance
● Avalanche rated
● Easy to mount
● Space-saving s
IXYS Semiconductor
0.2 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte
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