| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Continuous Drain Current (Ids) | 170 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 170A 4Pin SOT-227B
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