| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 130 A |
| Case/Package | ISOTOP |
| Drain to Source Resistance (on) (Rds) | 22.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 130 A |
| Rise Time | 75.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Weight | 36.0 mg |
The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
4 Pages / 0.15 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
