| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 500 V |
| Current Rating | 80.0 A |
| Case/Package | TO-264 |
| Drain to Source Resistance (on) (Rds) | 65.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.04 kW |
| Input Capacitance | 1.28 nF |
| Gate Charge | 197 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 80.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This IXFK80N50P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
5 Pages / 0.22 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 80A 3Pin(3+Tab) TO-264
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFK80N50Q3 MOSFET Transistor, Q3-Class, N Channel, 80A, 500V, 0.065Ω, 10V, 6.5V New
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
