TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 48.0 A |
Case/Package | TO-264 |
Drain to Source Resistance (on) (Rds) | 100 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 W |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 48.0 A |
Rise Time | 60.0 ns |
TYPE | DESCRIPTION |
---|
Packaging | Bulk |
The IXFK48N50 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Unclamped inductive switching (UIS) rating
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
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