| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 500 V |
| Current Rating | 44.0 A |
| Case/Package | TO-264 |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 650 W |
| Input Capacitance | 5.44 nF |
| Gate Charge | 98.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 44.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
●VDSS = 500 V
●ID25 = 44 A
●RDS(on) ≤140 mΩ
●trr ≤200 ns
●Features
●International standard packages
●Unclamped Inductive Switching (UIS) rated
●Low package inductance
●\- easy to drive and to protect
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.28 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 44A 3Pin(3+Tab) TO-264
IXYS Semiconductor
Trans MOSFET N-CH 500V 44A 3Pin(3+Tab) TO-264AA
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