| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 75.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 20.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Input Capacitance | 4.50 nF |
| Gate Charge | 260 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 75.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
The IXFH75N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density.
● International standard packages
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount with 1 screw (isolated mounting screw hole)
● Space saving
● Low trr
● High dV/dt rating
IXYS Semiconductor
4 Pages / 0.09 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 75A 3Pin(3+Tab) TO-247AD
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