| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 58.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 40.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 58.0 A |
| Rise Time | 15.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
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