| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 52.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 60.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Rise Time | 60.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Weight | 6.00 g |
The IXFH52N30Q is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process, low gate charge and capacitances.
● Avalanche rating
● High dV/dt rating
● Low trr
● International standard packages
● Rugged polysilicon gate cell structure
● Easy to mount
● Space saving
● High power density
● UL94V-0 Flammability rating
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