| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 44.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 650 W |
| Input Capacitance | 5.44 nF |
| Gate Charge | 98.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 44.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IXFH44N50P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switch-mode and resonant-mode power supplies.
● International standard packages
● Avalanche rating
● Low Qg
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.28 MByte
IXYS Semiconductor
Mosfet n-Ch 500V 44A To-247
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