| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 26.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 250 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 26.0 A |
| Rise Time | 32.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Weight | 6.00 g |
The IXFH26N60Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Low gate charge
● International standard package
● UL94V-0 Flammability rating
● Low RDS (ON) HDMOS™ process
● Rugged polysilicon gate cell structure
● Avalanche energy and current rated
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
0.22 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
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