| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 26.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 460 W |
| Input Capacitance | 4.15 nF |
| Gate Charge | 72.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 26.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
VDSS = 600 V
●ID25 = 26 A
●RDS(on) ≤ 270 mΩ
●trr ≤ 200 ns
●N-Channel Enhancement Mode
●Fast Recovery Diode
●Avalanche Rated
●Features
●Fast Recovery diode
●Unclamped Inductive Switching (UIS) rated
●International standard packages
●Low package inductance
● - easy to drive and to protect
●Advantages
●Easy to mount
●Space savings
●High power density
IXYS Semiconductor
0.23 MByte
IXYS Semiconductor
5 Pages / 0.19 MByte
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