TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 26.0 A |
Case/Package | TO-247 |
Drain to Source Resistance (on) (Rds) | 200 mΩ |
Polarity | N-Channel |
Power Dissipation | 300 W |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 26.0 A |
Rise Time | 30.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Bulk |
Weight | 6.00 g |
The IXFH26N50Q is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density.
● Avalanche rating
● High dV/dt rating
● IXYS advanced low Qg process
● International standard packages
● Fast switching
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) TO-247AD
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