| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Continuous Drain Current (Ids) | 15.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
The IXFH15N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance easy to drive and to protect and fast intrinsic rectifier.
● Unclamped inductive switching (UIS) rated
● International standard package
● Rugged polysilicon gate cell structure
● Low RDS (ON)
● High dV/dt and low trr
● Easy to mount
● High power density
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IXYS SEMICONDUCTOR IXFH15N100 Power MOSFET, N Channel, 15A, 1kV, 700mohm, 10V, 4.5V
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