| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 500 W |
| Drain to Source Voltage (Vds) | 1000V |
| Continuous Drain Current (Ids) | 14.0 A |
| TYPE | DESCRIPTION |
|---|
| Weight | 6.00 g |
The IXFH14N100Q2 is a Q2-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Double metal process for low gate resistance
● International standard package
● Avalanche energy and current rated
● UL94V-0 Flammability rating
● High dV/dt, low Qg and low trr
● Easy to mount
● Space savings
● High power density
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