| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247AD |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 14.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IXFH12N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation, laser drivers and RF amplifier applications.
● RF capable MOSFET
● Enhancement-mode
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped inductive switching rated
● High power density
IXYS Semiconductor
0.1 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
2 Pages / 0.29 MByte
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