| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-247AD |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
The IXFH12N100F is a 1000V N-channel Enhancement Mode Power MOSFET designed for laser driver, induction heating, switch mode power supplies and switching industrial applications.
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
Single N-Channel 1000V 300W 155NC 12A Surface Mount Power Mosfet - TO-247AD
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH12N100F Power MOSFET, N Channel, 12A, 1kV, 1.05Ω, 10V, 3V
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