TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 12.0 A |
Case/Package | TO-247 |
Drain to Source Resistance (on) (Rds) | 1.05 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Drain to Source Voltage (Vds) | 1.00 kV |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 33.0 ns |
TYPE | DESCRIPTION |
---|
Packaging | Bulk |
The IXFH12N100 is a 1000V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
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