The IXFB132N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today"s demanding high-voltage conversion system.
● Dynamic dV/dt rating
● Avalanche rating
● High power dissipation (Pd)
● Low thermal resistance (Rthjc)
● Fast intrinsic rectifier
● Low gate drive power requirements
● Low package inductance
● High power density
● Reduces conduction and switching losses
● Enables high-speed switching
● Promotes use of smaller passive components
● Promotes use of simple economical gate drive solutions
● Cooler device operation
● Enables system miniaturization
● Increased device ruggedness
● Easy to mount
