| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 47A |
The IRLZ44NSTRLPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications.
● Logic level gate drive
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.17 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Vishay Siliconix
MOSFET N-CH 60V 50A TO-220AB
International Rectifier
MOSFET N-CH 60V 50A TO-220AB
Samsung
N-CHANNEL LOGIC LEVEL MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.022Ω; ID 47A; D2Pak; PD 110W; VGS +/-16V; -55
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.022Ω; ID 47A; TO-220AB; PD 110W; VGS +/-16V
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