TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 55V |
Continuous Drain Current (Ids) | 30A |
The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Logic-level gate drive
● Advanced process technology
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