The IRLZ24NPBF is a 55V single N-channel HEXFET Power MOSFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-level gate drive
● Advanced process technology
● Dynamic dv/dt rating
● Fast switching
● Fully avalanche rated
● Planar MOSFET technology
● Industry-leading quality
● ±16V Gate to source voltage
● 0.30W/°C Linear derating factor
● 11A Avalanche current (IAR)
● 3.3°C/W Thermal resistance, junction to case
● 62°C/W Thermal resistance, junction to ambient
