| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-251AA |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 63A |
The IRLU3110ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in industrial applications and a wide variety of other applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
● Logic level
Infineon
11 Pages / 0.3 MByte
Infineon
7 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
4 Pages / 0.19 MByte
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(3+Tab) IPAK Tube
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