| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 10A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Logic level gate drive
Infineon
11 Pages / 0.26 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
(IRLR120 / IRLU120) HEXFET Power MOSFET
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W
Vishay Siliconix
MOSFET N-CH 100V 7.7A I-PAK
International Rectifier
MOSFET N-CH 100V 10A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(3+Tab) IPAK
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