| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 99A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRLR3636PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Optimized for logic level drive
● Very low RDS (ON) at 4.5V VGS
● Superior R
●Q at 4.5V VGS
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
10 Pages / 0.37 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
Trans MOSFET N-CH 60V 99A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 60V 99A 3Pin(2+Tab) DPAK T/R
IFA
Single N-Channel 60V 143W 33NC Hexfet Power Mosfet Surface Mount - DPAK
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