| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 17A |
The IRLR3410TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques.
● Logic level gate drive
● Advanced process technology
● Fully avalanche rating
● Dynamic dV/dt rating
Infineon
11 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
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