| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 17A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRLR3410PBF is a 100V single N-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
● Logic level gate drive
● Ultra low on-resistance
● Surface mount
● Advanced process technology
● Fast switching
● Fully avalanche rated
Infineon
11 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
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