| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 60A |
The IRLR2905ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Logic level
● Advanced process technology
● Ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● 175°C Operating temperature
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 55V 42A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 55V 60A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 42A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET N-CH 55V 42A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 42A; D-Pak (TO-252AA); PD 110W
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