TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 10.0 A |
Case/Package | TO-252 |
Polarity | N-Channel |
Power Dissipation | 39.0 W |
Part Family | IRLR120N |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 11.0 A, 10.0 A |
Rise Time | 35.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
11 Pages / 0.26 MByte
International Rectifier
11 Pages / 0.28 MByte
International Rectifier
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
Vishay Siliconix
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
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