| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 11.0 A |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| Power Dissipation | 48.0 W |
| Part Family | IRLR120N |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 35.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
●N-Channel Power MOSFET 8A to 12A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.26 MByte
International Rectifier
11 Pages / 0.28 MByte
International Rectifier
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
Vishay Siliconix
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
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