| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 4.30 A |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 4.30 A |
| Rise Time | 47.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRLR110PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Surface-mount
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
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