| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23 |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 20V |
| Continuous Drain Current (Ids) | 0.78A |
The IRLML6302PBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Generation V technology
● Low profile (<1.1mm)
● Fast switching
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
● Halogen-free
Infineon
9 Pages / 0.24 MByte
Infineon
8 Pages / 0.24 MByte
International Rectifier
소신호용 P-Channel MOSFET, Vdss = -20V, Rds = 0.6Ω, SOT-23
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.6Ω; ID -0.78A; Micro3; PD 540mW; VGS +/-12V
International Rectifier
Trans MOSFET P-CH 20V 0.78A 3Pin SOT-23 T/R
International Rectifier
International Rectifier IRLML6302PBF P-channel MOSFET Transistor, 0.78A, 20V, 3Pin SOT-23
International Rectifier
Trans MOSFET P-CH 20V 0.78A 3Pin SOT-23 T/R
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