| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 6.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRLL3303TRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
● Dynamic dV/dt rating
● Logic level gate drive
● Ease of paralleling
● Advanced process technology
● Ultra-low ON-resistance
● Low static drain-to-source ON-resistance
Infineon
9 Pages / 0.16 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.16 MByte
Infineon
1 Pages / 0.13 MByte
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